Solid state lighting devices with accessible electrodes and methods of manufacturing

ABSTRACT

Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

TECHNICAL FIELD

The present disclosure is related to light emitting dies (e.g., lightemitting diodes (“LEDs”)) and solid state lighting (“SSL”) devices withlight emitting dies having accessible electrodes and methods ofmanufacturing.

BACKGROUND

SSL devices can have light emitting dies with different electrodeconfigurations. For example, FIG. 1A is a cross-sectional view of alight emitting die 10 with lateral electrodes. As shown in FIG. 1A, thelight emitting die 10 includes a substrate 12 carrying an LED structure11 comprised of N-type gallium nitride (GaN) 14, GaN/indium galliumnitride (InGaN) multiple quantum wells (“MQWs”) 16, and P-type GaN 18.The light emitting die 10 also includes a first electrode 20 on theN-type GaN 14 and a second electrode 22 on the P-type GaN 18. As shownin FIG. 1A, the first and second electrodes 20 and 22 are both on thefront side of the LED structure 11 and readily accessible.

FIG. 1B shows a light emitting die 10′ with vertical electrodes. Thelight emitting die 10′ includes a first electrode 20 on the N-type GaN14 and second electrode 22 under the P-type GaN 18. The light emittingdie 10′ can have higher degrees of current spreading between the firstand second electrodes 20 and 22 than the light emitting die 10 of FIG.1A. However, the second electrode 22 is not readily accessible becauseit is buried between the P-type GaN 18 and the substrate 12. Inaddition, the first electrode 20 partially blocks the generated light(as indicated by the arrow 15 a), and thus only allows a portion of thegenerated light to be extracted (as indicated by the arrow 15 b). Thus,the light extraction efficiency of the light emitting die 10′ may belimited.

One approach for improving the light extraction efficiency of lightemitting dies with vertical electrodes is by incorporating a “buried”electrode. As shown in FIG. 1C, an light emitting die 10″ includes anopening 21 extending into the N-type GaN 14 from the substrate 12. Aninsulating material 25 lines the sidewalls 23 of the opening 21. Aconductive material is disposed in the opening 21 to form the firstelectrode 20. The light emitting die 10″ with the buried first electrode20 can have improved light extraction efficiencies because it does notcover any portion of the N-type GaN 14. However, neither of the firstand second electrodes 20 and 22 are readily accessible in this design,and they require precise alignment with external conductors to avoidelectrode mismatch. Accordingly, several improvements in electrodeconfiguration of light emitting dies may be desirable.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic cross-sectional diagram of a light emitting diewith lateral electrodes in accordance with the prior art.

FIG. 1B is a schematic cross-sectional diagram of a light emitting diewith vertical electrodes in accordance with the prior art.

FIG. 1C is a schematic cross-sectional diagram of a light emitting diewith a buried electrode in accordance with the prior art.

FIG. 2A is a schematic cross-sectional diagram of a light emitting diewith vertical electrodes in accordance with embodiments of the presenttechnology.

FIG. 2B is a schematic top plan view of the light emitting die shown inFIG. 2A.

FIG. 3A is a schematic cross-sectional diagram of a light emitting diewith a buried electrode in accordance with embodiments of the presenttechnology.

FIG. 3B is a schematic top plan view of the light emitting die shown inFIG. 3A.

FIG. 4 is a schematic illustration of an SSL device incorporating thelight emitting dies of FIGS. 2A-3B in accordance with embodiments of thepresent technology.

FIG. 5A is a schematic cross-sectional diagram of a light emitting diewith a buried electrode in accordance with embodiments of the presenttechnology.

FIG. 5B is a schematic top plan view of the light emitting die shown inFIG. 5A.

FIG. 5C is a schematic cross-sectional diagram of a light emitting diewith a buried electrode in accordance with embodiments of the presenttechnology.

FIG. 6A is a schematic cross-sectional diagram of a light emitting diewith a buried electrode in accordance with additional embodiments of thepresent technology.

FIG. 6B is a schematic top plan view of the light emitting die shown inFIG. 6A.

DETAILED DESCRIPTION

Various embodiments of light emitting dies, SSL devices with lightemitting dies, and methods of manufacturing are described below. As usedhereinafter, the term “SSL device” generally refers to devices with oneor more solid state light emitting dies, such as LEDs, laser diodes(“LDs”), and/or other suitable sources of illumination other thanelectrical filaments, a plasma, or a gas. A person skilled in therelevant art will also understand that the technology may haveadditional embodiments, and that the technology may be practiced withoutseveral of the details of the embodiments described below with referenceto FIGS. 2A-6B.

FIG. 2A is a schematic cross-sectional diagram of a light emitting die100, and FIG. 2B is a top plan view of the light emitting die 100 shownin FIG. 2A. As shown in FIG. 2A, the light emitting die 100 can includean SSL structure 111, a first electrode 120, a second electrode 122, anda substrate 102 carrying the SSL structure 111 with an insulatingmaterial 103 therebetween. Only certain components of the light emittingdie 100 are shown in FIGS. 2A and 2B, and it will be appreciated thatthe light emitting die 100 can also include a lens, a mirror, and/orother suitable optical and/or electrical components in otherembodiments.

In one embodiment, the substrate 102 can include a metal, a metal alloy,a doped silicon, and/or other electrically conductive substratematerials. For example, in one embodiment, the substrate 102 can includecopper, aluminum, and/or other suitable metals. In other embodiments,the substrate 102 can also include a ceramic material, a silicon, apolysilicon, and/or other generally non-conductive substrate materials.For example, the substrate 102 can include intrinsic silicon and/orpolysilicon materials. Even though only one SSL structure 111 is shownon the substrate 102, two, three, or any other desired number of SSLstructure 111 may be formed on the substrate 102 in practice.

In certain embodiments, the insulating material 103 can include siliconoxide (SiO₂), silicon nitride (Si₃N₄), and/or other suitablenon-conductive materials formed on the substrate 102 via thermaloxidation, chemical vapor deposition (“CVD”), atomic layer deposition(“ALD”), and/or other suitable techniques. In other embodiments, theinsulating material 103 can include a polymer (e.g.,polytetrafluoroethylene and/or other fluoropolymer oftetrafluoroethylene), an epoxy, and/or other polymeric materials. In oneexample, the polymeric materials may be configured as a preformed sheetor tape that can be attached to the substrate 102 via solid-solidbonding, adhesives, and/or other suitable techniques. In anotherexample, the polymeric materials may be configured as a paste or aliquid that may be applied to the substrate 102 and subsequently cured.In further embodiments, the insulating material 103 may be omitted ifthe substrate 102 is electrically insulative.

The SSL structure 111 is configured to emit light and/or other types ofelectromagnetic radiation in response to an applied electrical voltage.In the illustrated embodiment, the SSL structure 111 includes a firstsemiconductor material 104 having a first surface 113 a proximate afirst side 111 a of the light emitting die 100, an active region 106,and a second semiconductor material 108 having a second surface 113 bproximate a second side 111 b of the light emitting die 100. The SSLstructure 111 has a stack thickness equal to the sum of the thicknessesof the first semiconductor material 104, the active region 106, and thesecond semiconductor material 108. The stack thickness of the SSLstructure 111 shown in FIG. 2A, for example, is the distance between thefirst surface 113 a and the second surface 113 b. In other embodiments,the SSL structure 111 can also include silicon nitride, aluminum nitride(AlN), and/or other suitable intermediate materials.

In certain embodiments, the first semiconductor material 104 can includeN-type GaN (e.g., doped with silicon (Si)), and the second semiconductormaterial 108 can include P-type GaN (e.g., doped with magnesium (Mg)).In other embodiments, the first semiconductor material 104 can includeP-type GaN, and the second semiconductor material 108 can include N-typeGaN. In further embodiments, the first and second semiconductormaterials 104 and 108 can individually include at least one of galliumarsenide (GaAs), aluminum gallium arsenide (AlGaAs), gallium arsenidephosphide (GaAsP), gallium(III) phosphide (GaP), zinc selenide (ZnSe),boron nitride (BN), AlGaN, and/or other suitable semiconductormaterials.

The active region 106 can include a single quantum well (“SQW”), MQWs,and/or a bulk semiconductor material. As used hereinafter, a “bulksemiconductor material” generally refers to a single grain semiconductormaterial (e.g., InGaN) with a thickness greater than about 10 nanometersand up to about 500 nanometers. In certain embodiments, the activeregion 106 can include an InGaN SQW, GaN/InGaN MQWs, and/or an InGaNbulk material. In other embodiments, the active region 106 can includealuminum gallium indium phosphide (AlGaInP), aluminum gallium indiumnitride (AlGaInN), and/or other suitable materials or configurations.

In certain embodiments, at least one of the first semiconductor material104, the active region 106, and the second semiconductor material 108can be formed on the substrate material 102 via metal organic chemicalvapor deposition (“MOCVD”), molecular beam epitaxy (“MBE”), liquid phaseepitaxy (“LPE”), and hydride vapor phase epitaxy (“HVPE”). In otherembodiments, at least one of the foregoing components and/or othersuitable components (not shown) of the SSL structure 111 may be formedvia other suitable epitaxial growth techniques.

As shown in FIGS. 2A and 2B, the first electrode 120 is spaced apartfrom the second electrode 122 by the vertical thickness of the entireSSL structure 111. The shortest distance between the first and secondelectrodes in this embodiment, therefore, is the distance from the firstsurface 113 a to the second surface 113 b. In the illustratedembodiment, the first electrode 120 includes a plurality of electrodefingers 121 (three are shown for illustration purposes) coupled to oneanother by a cross member 123. The electrode fingers 121 extendgenerally parallel to an axis 105 (FIG. 2B) of the SSL structure 111,and the cross member 123 is generally perpendicular to the electrodefingers 121. In certain embodiments, the electrode fingers 121 and/orthe cross member 123 can include indium tin oxide (“ITO”), aluminum zincoxide (“AZO”), fluorine-doped tin oxide (“FTO”), and/or other suitabletransparent conductive oxides (“TCOs”). In other embodiments, theelectrode fingers 121 and/or the cross member 123 can include copper(Cu), aluminum (Al), silver (Ag), gold (Au), platinum (Pt), and/or othersuitable metals. In further embodiments, the electrode fingers 121and/or the cross member 123 can include a combination of TCOs and one ormore metals. Techniques for forming the electrode fingers 121 and/or thecross member 123 can include MOCVD, MBE, spray pyrolysis, pulsed laserdeposition, sputtering, electroplating, and/or other suitable depositiontechniques.

The second electrode 122 can include a reflective and conductivematerial (e.g., silver or aluminum), at least a portion of which can beexposed through the SSL structure 111. For example, as shown in FIGS. 2Aand 2B, the second electrode 122 includes a covered first portion 122 aand an exposed second portion 122 b laterally extending beyond the SSLstructure 111. As a result, the exposed second portion 122 b can form aconnection site 126 for interconnecting with external components (notshown) via a wirebond and/or other suitable couplers.

During manufacturing, in certain embodiments, the substrate 102 may beselected to have a first lateral dimension L_(S) greater than a secondlateral dimension L_(D) of the SSL structure 111. The insulatingmaterial 103 and the second electrode 122 (e.g., aluminum, silver, orother reflective and conductive materials) can then be formed on thesubstrate 102 in sequence. In one embodiment, the SSL structure 111 maybe attached to the second electrode 122 on the substrate 102 viasolid-solid bonding (e.g., copper-copper bonding, nickel-tin bonding,and gold-tin bonding) between the second electrode 122 and the secondsemiconductor material 108. In another embodiment, a bonding material(e.g., gold-tin, not shown) may be formed on the second semiconductormaterial 108. In yet another embodiment, a reflective material (e.g.,silver, not shown) may be formed on the second semiconductor material108 before forming the bonding material. The SSL structure 111 can thenbe bonded to the substrate 102 via solid-solid bonding between thesecond electrode 122 and the bonding material. In further embodiments,the SSL structure 111 may be attached to the substrate 102 via othersuitable mechanisms.

In other embodiments, the substrate 102 may be selected to have a firstlateral dimension L_(S) that is generally the same as the lateraldimension L_(D) of the SSL structure 111. After attaching the SSLstructure 111 to the substrate 102, a portion of the SSL structure 111may be removed to form the exposed second portion 122 b of the secondelectrode 122. Techniques for removing a portion of the SSL structure111 can include partial dicing (e.g., with a die saw), laser ablation,wet etching, dry etching, and/or other suitable technique. In furtherembodiments, the partially exposed second electrode 122 may be formedvia other suitable techniques.

Several embodiments of the light emitting die 100 can have theconnection accessibility of the light emitting die 10 of FIG. 1A withcurrent spreading characteristics generally similar to that of the lightemitting die 10′ of FIG. 1B. As shown in FIGS. 2A and 2B, the exposedsecond portion 122 b of the second electrode 122 provides ready accessfor external connection. As a result, both the first electrode 120 andthe second electrode 122 can be accessed from the same side (i.e., thefirst side 111 a) of the SSL structure 111. Meanwhile, the covered firstportion 122 a of the second electrode 122 is arranged vertically acrossthe SSL structure 111 with respect to the first electrode 120, and thusproviding better current distribution through the SSL structure 111compared to the lateral device in FIG. 1A. As a result, severalembodiments of the light emitting die 100 can operate with highefficiency while providing the connection accessibility of the lightemitting die 10 of FIG. 1A.

Even though the exposed second portion 122 b of the second electrode 122is shown in FIG. 2B as extending substantially the entire depth D (FIG.2B) of the SSL structure 111 along the axis 105, in other embodimentsthe second portion 122 b may extend only partially along the axis 105 ofthe SSL structure 111. For example, as shown in FIGS. 3A and 3B, thesecond portion 122 b may be exposed through a notch 128 in the SSLstructure 111 formed on the substrate 102 with the insulating material103. The notch 128 has a depth d (FIG. 3B) that is less than the depth D(FIG. 2B) of the SSL structure 111. In other embodiments, the secondportion 122 b may also include a plurality of individual sections spacedapart from one another. For example, three sections (identifiedindividually as first, second, and third sections 122 b, 122 b′, and 122b″) are shown in FIG. 3B for illustration purposes. Each of the threesections 122 b, 122 b′, and 122 b″ may form a connection site 126 forconnecting to an external component (not shown). As a result, the lightemitting die 100 can provide a plurality of connection sites 126 toreceive/transmit signals and/or power to/from more than one component.In further embodiments, the insulating material 103 may be omitted fromthe light emitting die 100.

Several embodiments of the light emitting die 100 can be packaged in anSSL device with improved thermal dissipation characteristics overconventional devices. For example, FIG. 4 is a schematic illustration ofan SSL device 150 incorporating the light emitting dies 100 of FIGS.2A-3B in accordance with embodiments of the present technology. As shownin FIG. 4, the SSL device 150 can include a carrier 152 carrying aplurality of light emitting dies 100. Four light emitting dies 100 areshown in FIG. 4 for illustration purposes. In other embodiments, the SSLdevice 150 can include any other desired number of light emitting dies100.

The carrier 152 can include a metal, a metal alloy, and/or other typesof thermally conductively structure. The SSL assembly 150 can alsoinclude a first terminal 154 laterally spaced apart from a secondterminal 156 on the carrier 152. The first and second terminals 154 and156 are formed on insulative pads 155 and 157, respectively. Theinsulative pads 155 and 157 can include silicon oxide, silicon nitride,and/or other suitable types of electrically insulative materials.

As shown in FIG. 4, the first terminal 154, the plurality of lightemitting dies 100, and the second terminal 156 are electrically coupledwith wirebonds 158 in series because the first and second electrodes 120and 122 are both on the front side of the individual light emitting dies100. As a result, the back side of the light emitting dies 100 candirectly contact the surface 152 a of the carrier 152. In operation,such direct contact allows the light emitting dies 100 to readilytransfer heat to the thermally conductive carrier 152, and thusefficiently dissipate heat away from the light emitting dies 100.

FIG. 5A is a schematic cross-sectional diagram of an light emitting die200 with a buried electrode in accordance with another embodiment of thetechnology, and FIG. 5B is a top plan view of the light emitting die 200in FIG. 5A. The light emitting die 200 can include components that aregenerally similar in structure and function as those of the lightemitting die 100 in FIGS. 2A-3B. For example, the light emitting die 200can include the substrate 102 carrying the SSL structure 111 and theexposed second electrode 122 that are generally similar to thosediscussed above with reference to FIGS. 2A-3B. As such, common acts andstructures are identified by the same reference numbers, and onlysignificant differences in operation and structure are described below.

As shown in FIG. 5A, the SSL structure 111 includes a plurality ofopenings 130 (only one is shown in FIG. 5A after it has been filled forclarity) extending from the second electrode 122 into the firstsemiconductor material 104 of the SSL structure 111. A passivationmaterial 125 (e.g., silicon oxide or silicon nitride) has a firstportion 125 a in the opening 130 and a second portion 125 b external tothe opening 130. The first portion 125 a generally conforms to thesidewall 131 of the opening 130 and forms a dielectric liner. The secondportion 125 b has a first surface 127 a in contact with the secondelectrode 122 and a second surface 127 b in contact with the substrate102.

The first electrode 120 can include a conductive material 132 adjacentthe passivation material 125 in the opening 130. In the illustratedembodiment, the conductive material 132 has a first end 132 a that isgenerally co-planar with the passivation material 125 such that thefirst end 132 a of the conductive material 132 is in direct contact withthe substrate 102. The conductive material 132 also includes a secondend 132 b in contact with the first semiconductor material 104. As aresult, the conductive material 132 electrically couples the firstsemiconductor material 104 to the substrate 102.

Several embodiments of the light emitting die 200 can have moreaccessible electrical connections than conventional buried electrodedevices. For example, as shown in FIG. 5A, the first electrode 120 iselectrically coupled to the substrate 102. As a result, in certainembodiments, the substrate 102 may be electrically conductive and usedas a connection site/path to electrically couple external components(not shown). Thus, precise alignment with external conductors may beavoided to reduce production complexity and costs.

In other embodiments, the substrate 102 may be electrically insulativeand may include signal routing components (e.g., metal routing layers134) that route the individual first electrodes 120 to respectivelyelectrical couplers 136 (e.g., solder bumps, solder balls, and/or pillarbumps), as shown in FIG. 5C. In further embodiments, the substrate 102may be partially electrical conductive and partially electricallyinsulative. In yet further embodiments, the light emitting die 200 mayinclude other suitable configurations, as discussed in more detail belowwith reference to FIGS. 6A and 6B.

FIG. 6A is a schematic cross-sectional diagram of a light emitting die300 with a buried electrode, and FIG. 6B is a schematic top plan view ofthe light emitting die 300 shown in FIG. 6A. As shown in FIG. 6A, thelight emitting die 300 includes the substrate 102, the insulatingmaterial 103 on the substrate 102, and the SSL structure 111 withexposed first and second electrodes 120 and 122. The second electrode122 can be generally similar to that discussed above with reference toFIG. 5A. In other embodiments, the insulating material 103 may beomitted.

The first electrode 120 includes the conductive material 132. A firstpart 133 a of the conductive material 132 is adjacent the passivationmaterial 125 in the opening 130. A second part 133 b of the conductivematerial 132 is external to the opening 130. In the illustratedembodiment, a portion of the second part 133 b laterally extends beyondthe second portion 125 b of the passivation material 125 and the secondportion 122 b of the second electrode 122. As a result, the second part133 b of the conductive material 132 (generally designated as connectionarea 135) is at least partially exposed through the SSL structure 111.In other embodiments, the second portion 122 b of the second electrode122 may be laterally opposite and/or having other arrangements relativeto the connection area 135. In further embodiments, the conductivematerial 132 may include a stack of a plurality of conductive materials(not shown). As shown in FIG. 6B, both the first and second electrodes120 and 122 are accessible from the same side of the SSL structure 111.

Even though the light emitting dies 200 and 300 shown in FIGS. 5B and 6Binclude first and/or second electrodes 120 and 122 extending the entiredepth D of the substrate 102, in other embodiments, the first and/orsecond electrodes 120 and 122 may also extend a partial depth D of thesubstrate 102, generally similar to the light emitting die 100 discussedabove with reference to FIG. 3B. In further embodiments, the firstand/or second electrodes 120 and 122 may include a plurality ofelectrode elements (not shown).

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustration,but that various modifications may be made without deviating from thedisclosure. In addition, many of the elements of one embodiment may becombined with other embodiments in addition to or in lieu of theelements of the other embodiments. Accordingly, the disclosure is notlimited except as by the appended claims.

We claim:
 1. A light emitting die, comprising: a first semiconductormaterial having a first surface; a second semiconductor material havinga second surface facing away from the first surface of the semiconductormaterial; an active region between the first and second semiconductormaterals, wherein the first semiconductor material, the active region,and the second semiconductor material together have a stack thicknessequal to a distance between the first and the second surfaces; a firstelectrode in contact with the first surface of the first semiconductormaterial; a second electrode in contact with the second surface of thesecond semiconductor material, the second electrode being spaced apartfrom the first electrode by at least the stack thickness, wherein thesecond electrode includes a first portion covered by the firstsemiconductor material, the active region, and the second semiconductormaterial; a second portion extending from the first portion, the secondportion of the second electrode including a plurality of individualsections spaced apart from one another; and the individual sections ofthe second portion laterally extend beyond the first semiconductormaterial, the active region, and the second semiconductor material; andwherein a portion of the second electrode is exposed through the firstsemiconductor material, the active region, and the second semiconductormaterial.
 2. A light emitting device, comprising: a first semiconductormaterial; a second semiconductor material spaced apart from the firstsemiconductor material; an active region between the first and secondsemiconductor materials; an opening extending completely through thesecond semiconductor material and the active region and only a portionof the first semiconductor material; a passivation material having afirst passivation portion lining a sidewall of the opening and a secondpassivation portion extending laterally relative to the firstpassivation portion external to the opening; a first electrode in theopening and adjacent the first passivation portion; and a secondelectrode external to the opening between the second semiconductormaterial and the second passivation portion of the passivation material,a portion of the second electrode being exposed through the firstsemiconductor material, the active region, and the second semiconductormaterial.
 3. The light emitting device of claim 2 wherein: the lightemitting device further includes a conductive substrate proximate thesecond semiconductor material; and the first electrode is in directcontact with the conductive substrate.
 4. The light emitting device ofclaim 2 wherein: the light emitting device further includes a conductivesubstrate proximate the second semiconductor material; the firstelectrode is in direct contact with the conductive substrate; and thesecond passivation portion electrically isolates the second electrodefrom the conductive substrate.
 5. The light emitting device of claim 2wherein: the light emitting device further includes a conductivesubstrate proximate the second semiconductor material; the firstelectrode has a first end proximate the first semiconductor material anda second end proximate the second semiconductor material; the secondpassivation portion has a first surface and a second surface oppositethe first surface, the first surface being in contact with the secondelectrode; and the second surface of the second passivation portion isgenerally co-planar with the second end of the first electrode.
 6. Thelight emitting device of claim 2 wherein: the light emitting devicefurther includes a conductive substrate proximate the secondsemiconductor material; the first electrode has a first end proximatethe first semiconductor material and a second end proximate the secondsemiconductor material; the second passivation portion of thepassivation material has a first surface and a second surface oppositethe first surface, the first surface being in contact with the secondelectrode; the second surface of the second passivation portion isgenerally co-planar with the second end of the first electrode; and boththe second surface of the second passivation portion and the second endof the first electrode are in contact with the conductive substrate. 7.The light emitting device of claim 2 wherein: the first electrode has afirst conductive portion in the opening and a second conductive portionexternal to the opening; and the second conductive portion extendslaterally beyond the second electrode.
 8. The light emitting device ofclaim 2 wherein: the first electrode has a first conductive portion inthe opening and a second conductive portion external to the opening; thefirst passivation portion of the passivation material electricallyisolates the first conductive portion from the active region and thesecond semiconductor material; and the second conductive portion extendslaterally beyond the second electrode.
 9. The light emitting device ofclaim 2 wherein: the first electrode has a first conductive portion inthe opening and a second conductive portion external to the opening; thefirst passivation portion of the passivation material electricallyisolates the first conductive portion from the active region and thesecond semiconductor material; the second conductive portion is incontact with the second passivation portion; and the second conductiveportion extends laterally beyond the second passivation portion and thesecond electrode.
 10. The light emitting device of claim 2 wherein: thelight emitting device further includes a substrate and an insulatingmaterial on the substrate; the first electrode has a first conductiveportion in the opening and a second conductive portion external to theopening; the first passivation portion of the passivation materialelectrically isolates the first conductive portion from the activeregion and the second semiconductor material; the second conductiveportion is between the insulating material and the second passivationportion; and the second conductive portion extends laterally beyond thesecond passivation portion and the second electrode.
 11. A lightemitting diode (“LED”) die, comprising: a first semiconductor material;a second semiconductor material spaced apart from the firstsemiconductor material; an active region between the first and secondsemiconductor materials; a first electrode extending through the secondsemiconductor material, the active region and a portion of the firstsemiconductor material, wherein the first electrode is electricallycoupled to the first semiconductor material and electrically isolatedfrom the second semiconductor material and the active region; and asecond electrode in contact with the second semiconductor material andsurrounding at least a portion of the first electrode, wherein thesecond electrode is electrically isolated from the first electrode and aportion of the second electrode is exposed through the firstsemiconductor material, the active region, and the second semiconductormaterial.
 12. The LED die of claim 11 wherein: the second electrodeincludes a first portion and a second portion extending from the firstportion; the first portion of the second electrode is covered by thefirst semiconductor material, the active region, and the secondsemiconductor material; and the second portion of the second electrodeis exposed through the first semiconductor material, the active region,and the second semiconductor material.
 13. The LED die of claim 11wherein: the second electrode includes a first portion and a secondportion extending from the first portion; the first portion of thesecond electrode is covered by the first semiconductor material, theactive region, and the second semiconductor material; the LED die has anopening extending through the first portion of the second electrode; thesecond portion of the second electrode is exposed through the firstsemiconductor material, the active region, and the second semiconductormaterial; the first electrode has a first conductive portion in theopening and a second conductive portion external to the opening; and thesecond conductive portion extends laterally beyond the second portion ofthe second electrode.
 14. The LED die of claim 11 wherein: the secondelectrode includes a first portion and a second portion extending fromthe first portion; the first portion of the second electrode is coveredby the first semiconductor material, the active region, and the secondsemiconductor material; the LED die has an opening extending through thefirst portion of the second electrode; the second portion of the secondelectrode is exposed through the first semiconductor material, theactive region, and the second semiconductor material; the firstelectrode has a first conductive portion in the opening and a secondconductive portion external to the opening; the second conductiveportion extends laterally beyond the second portion of the secondelectrode; and the second conductive portion and the second portion ofthe second electrode are accessible from the same side of the LED die.15. The LED die of claim 11 wherein: the second electrode includes afirst portion and a second portion extending from the first portion; thefirst portion of the second electrode is covered by the firstsemiconductor material, the active region, and the second semiconductormaterial; the LED die has an opening extending through the first portionof the second electrode; the second portion of the second electrode isexposed through the first semiconductor material, the active region, andthe second semiconductor material; the first electrode has a firstconductive portion in the opening and a second conductive portionexternal to the opening; the second conductive portion extends laterallybeyond the second portion of the second electrode; and the LED diefurther includes a passivation material between the second conductiveportion of the conductive material and the second electrode.
 16. A solidstate lighting (“SSL”) die, comprising: a first semiconductor material;a second semiconductor material spaced apart from the firstsemiconductor material; an active region between the first and secondsemiconductor materials; an opening extending from the secondsemiconductor material into the first semiconductor material through theactive region; a first electrode having a first portion in the openingand a second portion external to the opening; a second electrode havinga first part covered by the second semiconductor material and a secondpart extending laterally from the first part; and wherein the secondportion of the first electrode and the second part of the secondelectrode are both at least partially exposed through the firstsemiconductor material, the active region, and the second semiconductormaterial.
 17. The SSL die of claim 16 wherein the second portion of thefirst electrode extends laterally beyond the second part of the secondelectrode.
 18. The SSL die of claim 16 wherein: the second part of thesecond electrode extends laterally beyond the first semiconductormaterial, the active region, and the second semiconductor material; andthe second portion of the first electrode extends laterally beyond thesecond part of the second electrode.
 19. The SSL die of claim 16wherein: the SSL die further includes a passivation material having afirst passivation portion in the opening and a second passivationportion external to the opening; the first passivation portion generallyconforms to a sidewall of the opening; and the second passivationportion is between the second portion of the first electrode and thesecond part of the second electrode.
 20. The SSL die of claim 16wherein: the SSL die further includes a passivation material having afirst passivation portion in the opening and a second passivationportion external to the opening; the second passivation portion isbetween the second portion of the first electrode and the second part ofthe second electrode; and the second portion of the first electrodeextends laterally beyond both the second part of the second electrodeand the second passivation portion.
 21. The SSL die of claim 16, furthercomprising: a substrate proximate the second portion of the firstelectrode; and an insulation material between the substrate and thesecond portion of the first electrode.
 22. A method of forming a lightemitting device having a first semiconductor material, a secondsemiconductor material spaced apart from the first semiconductormaterial, and an active region between the first and secondsemiconductor materials, the method comprising: forming an openingextending completely through the second semiconductor material and theactive region and only a portion of the first semiconductor material;depositing a passivation material onto the light emitting device, thepassivation material having a first passivation portion lining asidewall of the opening and a second passivation portion extendinglaterally relative to the first passivation portion external to theopening; forming a first electrode in the opening and adjacent the firstpassivation portion; forming a second electrode external to the openingon the second semiconductor material; and exposing a portion of thesecond electrode through the first semiconductor material, the activeregion, and the second semiconductor material.
 23. The method of claim22, further comprising: attaching a conductive substrate to the secondpassivation portion on the second semiconductor material; and contactingthe conductive substrate with the first electrode.
 24. The method ofclaim 22 wherein exposing a portion of the second electrode includesremoving a portion of the first semiconductor material, the activeregion, and the second semiconductor material.